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Published online by Cambridge University Press: 21 February 2011
A rapid method to measure residual strains using x-rays during continuous temperature ramping has been developed whereby resolution of ±5xl0-5 can be attained with 2θ scans of about one minute using low index reflections. The method was used to make residual stress measurements during temperature cycling at heating rates of 2 to 15°C/min with interrupted stress relaxations at 235°C and 130°C on pure Al blanket films of 0.24μm, 0.58μm and 1.01 μm thicknesses. The results are consistent with the notion that surface sources are activated by the back stress of misfit dislocations.