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Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

Published online by Cambridge University Press:  15 February 2011

G. Weidner ,
D. Kröger ,
M. Weidner  and
K. Tittelbach-Helmrich
G. Weidner
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
D. Kröger
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
M. Weidner
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
K. Tittelbach-Helmrich
Affiliation:
Institute of Semiconductor Physics, Walter-Korsing-Str. 2, D-15230 Frankfurt (Oder), Germany
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Abstract

This paper investigates conditions of low thermal budget N2O and NO oxidation with simultaneous accumulation of 0.5 to 1 at% nitrogen at the SiO2/Si interface of thin oxide layers. A nitrogen accumulation model is presented. It is concluded that the nitrogen accumulation should be realized with oxidizing conditions at the interface to silicon and it is proposed to control the NO partial pressure in reactor gas for the desired nitrogen amount at tolerable thermal budget.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 265
Copyright
Copyright © Materials Research Society 1995

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References

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