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Tem Study of GaSb/InAs Strained Layer Supeplattices
Published online by Cambridge University Press: 26 February 2011
Extract
Cross-sectional TEM of GaSb/InAs superlattices grown by MBE on (100) GaAs and (100) GaSb substrates shows an unusual defect structure within the strained layers. Dislocations are present within the layers and at the interface. High-resolution TEM analysis of the structure of the InAs layers suggests that these layers grow by an island mechanism. A crystal structure different from the zinc blende, is found to be present within the GaSb layers.
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- Copyright © Materials Research Society 1985
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