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Surface Roughening During Titanium Silicide Formation: a Comparison Between Si(100) and Poly-Si Substrates

Published online by Cambridge University Press:  15 February 2011

C. Lavoie ,
R. Martel ,
C. Cabral Jr. ,
L. A. Clevenger  and
J. M. E. Harper
C. Lavoie
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
R. Martel
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
C. Cabral Jr.
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
L. A. Clevenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
J. M. E. Harper
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We demonstrate that the formation of TiSi2 for Ti films deposited on undoped Si(100) substrates leads to rougher surfaces than for Ti films deposited on undoped poly-Si substrates. The successive formations of TiSi2, C49 (high resistivity) and C54 (low resistivity) phases from titanium films deposited on either Si(100) or poly-Si substrates were monitored in situ during rapid thermal annealing using elastic light scattering, x-ray diffraction and resistance measurements. For both types of substrates, the roughening occurs only during the formation of the first TiSi2, phase (C49) by light scattered from lateral length scales of ˜0.5 μm. Atomic force microscopy (AFM) images. quantified using Fourier filtering, are consistent with the light scattering results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 389
Copyright
Copyright © Materials Research Society 1997

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References

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