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Structural Properties of 3C-SiC Layers Grown on Si Substrates by Electron Cyclotron Resonance CVD Technique

Published online by Cambridge University Press:  21 March 2011

F. Giorgis ,
A. Chiodoni ,
G. Cicero ,
S. Ferrero ,
P. Mandracci ,
C. F. Pirri ,
G. Barucca ,
L. Calcagno ,
G. Foti  and
P. Musumeci
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F. Giorgis*
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
A. Chiodoni
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
G. Cicero
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
S. Ferrero
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
P. Mandracci
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
C. F. Pirri
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
G. Barucca
Affiliation:
INFM and Materials Science Dept., University of Ancona, Via Brecce Bianche, I-60131 Ancona (Italy)
L. Calcagno
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
G. Foti
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
P. Musumeci
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
R. Reitano
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
*
*Author to whom correspondence should be addressed. E-mail: [email protected]
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Abstract

In this work we mainly report on the analyses of polycrystalline silicon carbide films grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) on Si (100) and Si (111) substrates. Structural properties of the films have been analyzed by X-ray diffractometry, transmission electron microscopy and micro-Raman spectroscopy. Samples deposited with optimized deposition conditions, show a polycrystalline columnar structure with lateral crystal dimensions ranging from 300 up to 1400 Å and an orientation close to that of the Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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