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Structural Origin of Bulk Molecular Hydrogen in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Xiao Liu ,
R.O. Pohl  and
R.S. Crandall
Xiao Liu
Affiliation:
Department of Physics, Cornell University, Ithaca, NY 14853, [email protected]
R.O. Pohl
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
R.S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

The elastic anomaly observed previously at the triple point of bulk molecular hydrogen in hydrogenated amorphous silicon films prepared by hot-wire chemical-vapor deposition has also been observed in deuterated films at the triple point of D2. The origin of this anomaly has now been traced to bubbles formed at the crystalline-amorphous interface. An upper limit of the pressure in these bubbles at their formation temperature, 440°C, has been estimated to be 11 MPa, and is suggested to be a measure of the bonding strength between film and substrate at that temperature. Bubble formation after heat treatment at 400°C has also been observed in films prepared by plasma-enhanced chemical-vapor deposition. The internal friction anomalies resemble those observed previously in cold-worked hydrogenated iron where they have been interpreted through plastic deformation of solid hydrogen in voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 323
Copyright
Copyright © Materials Research Society 1999

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References

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