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Structural Characterization of GeSn Alloy Nanocrystals Embedded in SiO2

Published online by Cambridge University Press:  31 January 2011

Swanee J. Shin ,
Julian Guzman ,
Chun-Wei Yuan ,
Christopher Y. Liao ,
Peter Stone ,
Oscar D. Dubon ,
Andrew M. Minor ,
Masashi Watanabe ,
Joel Ager III  and
Daryl Chrzan
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Swanee J. Shin
Affiliation:
[email protected], United States
Julian Guzman
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Chun-Wei Yuan
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Christopher Y. Liao
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Peter Stone
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Oscar D. Dubon
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Andrew M. Minor
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Masashi Watanabe
Affiliation:
[email protected], Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, California, United States
Joel Ager III
Affiliation:
[email protected], Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, California, United States
Daryl Chrzan
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
Eugene Haller
Affiliation:
[email protected], UC Berkeley, MSE Dept., Berkeley, California, United States
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Abstract

GeSn alloy nanocrystals were formed by implantation of Ge and Sn ions into an amorphous SiO2 matrix and subsequent thermal annealing. High resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) with a high angle annular dark field (HAADF) detector were used to show that phase-segregated crystalline bi-lobe nanocrystals were formed. Rapid melting and solidification using a single excimer laser pulse transformed the bi-lobe structure into a homogeneously mixed amorphous structure. Raman spectroscopy was used to monitor the crystalline nature and approximate grain size of the Ge portion of the nanocrystals after each heat treatment, and the Raman spectra were compared with the TEM images.

Keywords

Genanostructureion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1184: Symposium GG – Electron Crystallography for Materials Research and Quantitive Characterization of Nanostructured Materials , 2009 , 1184-HH04-08
Copyright
Copyright © Materials Research Society 2009

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References

1. Meldrum, A., Haglund, R. F., Boatner, L. A., and White, C. W., Adv. Mater. 13, 1431 (2001).Google Scholar
2. Sharp, I. D., Xu, Q., Liao, C. Y., Yi, D. O., Beeman, J. W., Liliental-Weber, Z., Yu, K. M., Zakharov, D. N., Ager, J. W. III, Chrzan, D. C., and Haller, E. E., J. Appl. Phys. 97, 124316 (2005).Google Scholar
3. Xu, Q., Sharp, I. D., Yuan, C. W., Yi, D. O., Liao, C. Y., Glaeser, A. M., Minor, A. M., Beeman, J. W., Ridgway, M. C., Kluth, P., III, J. W. A., Chrzan, D. C., and Haller, E. E., Phys. Rev. Lett. 97, 155701 (2006).Google Scholar
4. Kluth, P., Hoy, B., Johannessen, B., Dunn, S. G., Foran, G. J., and Ridgway, M. C., Appl. Phys. Lett. 89, 153118 (2006).Google Scholar
5. Strobel, M., Heinig, K.-H., and Moller, W., Nucl. Instrum. Methods Phys. Res., Sect. B 148, 104 (1999).Google Scholar
6. Yuan, C. W., Shin, S. J., Liao, C. Y., Guzman, J., Stone, P. R., Watanabe, M., Ager, J. W. III , Haller, E. E., and Chrzan, D. C., Appl. Phys. Lett. 93, 193114 (2008).Google Scholar
7. Jenkins, D. W. and Dow, J. D., Phys. Rev. B 36, 7994 (1987).Google Scholar
8. He, G. and Atwater, H. A., Phys. Rev. Lett. 79, 1937 (1997).Google Scholar
9. D’Costa, V. R., Cook, C. S., Birdwell, A. G., Littler, C. L., Canonico, M., Zollner, S., Kouvetakis, J., and Menendez, J., Phys. Rev. B 73, 125207 (2006).Google Scholar
10. Nakamura, Y., Masada, A., and Ichikawa, M., Appl. Phys. Lett. 91, 013109 (2007).Google Scholar
11. Naruse, N., Mera, Y., Nakamura, Y., Ichikawa, M., and Maeda, K., Appl. Phys. Lett. 94, 093104 (2009).Google Scholar
12. Williamson, A. J., Bostedt, C., vanBuuren, T., Willey, T. M., Terminello, L. J., Galli, G., and Pizzagalli, L., Nano Lett. 4, 1041 (2004).Google Scholar