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Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

Published online by Cambridge University Press:  22 February 2011

R.J. Matyi ,
D.L. Chapek ,
J.R. Conrad  and
S.B. Felch
R.J. Matyi
Affiliation:
Dept. of Materials Science and Engineering
D.L. Chapek
Affiliation:
Dept. of Nuclear Engineering and Engineering Physics, University of Wisconsin, Madison, WI 53706
J.R. Conrad
Affiliation:
Dept. of Nuclear Engineering and Engineering Physics, University of Wisconsin, Madison, WI 53706
S.B. Felch
Affiliation:
Ginzton Research Center, Varian Associates, Inc., Palo Alto, CA 94304
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Abstract

We have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1017
Copyright
Copyright © Materials Research Society 1994

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References

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