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Stress Release in Ion Implanted Lattice Mismatched Semiconductor Heterostructures

Published online by Cambridge University Press:  26 February 2011

G. W. Arnold ,
S. T. Picraux ,
D. R. Myers ,
B. L. Doyle ,
P. S. Peercy ,
R. M. Biefeld  and
L. R. Dawson
G. W. Arnold
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
D. R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
B. L. Doyle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
R. M. Biefeld
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
L. R. Dawson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–5800
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Abstract

Cantilever-beam measurements of ion-implantation induced stress in (InGa)As/GaAs, Ga(AsP)/GaP, and Ga(AsP)/GaAs strained layer superlattices (SLSs), grown either by molecular-beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD), have shown that a mechanism for precipitous stress-relief can be operative, f or room-temperature damage -energy deposition values above - 2 × 10 keV/cm. This phenomenon is correlated with the initial residual compressive stress on the composite structure and is determined by the differences in lattice parameter between the substrate and the buffer alloy-layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 417
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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