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Stress Controlled MBE-growth of GaN:Mg and GaN:Si

Published online by Cambridge University Press:  10 February 2011

Y. Kim ,
R. Klockenbrink ,
C. Kisielowski ,
J. Krueger ,
D. Corlatan ,
G. S Sudhir ,
Y. Peyrot ,
Y. Cho ,
M. Rubin  and
E. R. Weber
Y. Kim
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720 [email protected]
R. Klockenbrink
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
C. Kisielowski
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
J. Krueger
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
D. Corlatan
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
G. S Sudhir
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
Y. Peyrot
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
Y. Cho
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
M. Rubin
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

The stress in GaN thin films grown on sapphire is shown to be determined by lattice mismatch, by differences in thermal-expansion-coefficients and by the incorporation of point defects. It can be controlled by the buffer layer thickness, the buffer layer growth temperature, the V/III flux ratio, and by doping. It is argued that a Fermi-level dependence of defect formation energies affects the material stoichiometry and thereby lattice constants and stresses. We observed that stress relaxation occurred if the stresses exceeded a critical compressive or tensile stress value. The stress changes materials properties. As an example, it is demonstrated that the electron Hall mobility in GaN:Si can be increased with constant electron carrier concentration if large compressive stress is present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 217
Copyright
Copyright © Materials Research Society 1998

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