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Stress and Resistivity in Reactively Sputtered Amorphous Metallic Ta-Si-N Films

Published online by Cambridge University Press:  26 February 2011

C.-K. Kwok ,
E. Kolawa ,
M-A. Nicolet  and
Ray C. Lee
C.-K. Kwok
Affiliation:
California Institute of Technology, Pasadena, CA 91125
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Ray C. Lee
Affiliation:
University of Wisconsin-Milwaukee, Milwaukee, WI 53201
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Abstract

We have measured the stress and the electrical resistivity of Ta-Si-N films deposited in an rf magnetron system by reactive sputtering of Ta5 Si3 target in an Ar-N2 mixture. The stress was determined by measuring the curvature of thin Si substrates with a stylus instrument. The atomic composition was established from backscattering spectra. The resistivity was derived from four-point probe measurements. The stress, the resistivity, and the atomic composition were studied as a function of various processing parameters (total pressure, gas composition). The stress is always compressive and can be changed from 0.38 - 1.48 GPa by such means. The resistivity is principally a function of the nitrogen composition and rises as the nitrogen amount increases. The results are compared with those reported for other amorphous metallic alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 261
Copyright
Copyright © Materials Research Society 1991

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