Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-02-09T22:24:09.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Strains and Relaxations Near metal Alumlnide/Semiconductor Interfaces

Published online by Cambridge University Press:  26 February 2011

W.W. Gerberich ,
J.E. Angelo ,
R.R. Keller ,
A.M. Wowchak  and
P.I. Cohen
W.W. Gerberich
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J.E. Angelo
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
R.R. Keller
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
A.M. Wowchak
Affiliation:
Dept of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
P.I. Cohen
Affiliation:
Dept of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

Mechanisms and phenomena of strain relaxation at bi-material interfaces have been studied for over half a century. The details, however, and limiting kinetics, thermodynamics and mechanics are still being sorted out - particularly for large misfit systems. Three techniques are required to accurately portray strain distributions during and after epitaxial growth: RHEED, TEM and SACP. Reflection high energy electron diffraction (RHEED) is used to measure the lattice parameter during growth. Both transmission electron microscopy (TEM) and selected area electron channeling pattern (SACP) analysis are necessary to identify the defects and the strain distribution. These techniques have been applied to NiAl and FeAl grown by MBE on GaAs with a thin AlAs buffer layer. It is shown that both island and layer by layer growth can occur with the corresponding defects being remarkably similar in character. From a combined Moiré, HREM and computer simulation, the dislocation character is assessed. Both <100> dislocations from half-loops or island edges may occur providing only partial relaxation of the film-substrate systems. The impact of the remaining elastic strain distribution on kinetic measurements of dislocation velocities is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 279
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sands, T., Palmstrom, C.J., Harbison, J.P., Keramidas, V.G., Tabatabaie, N., Cheeks, T.L., Ramesh, R., and Silberberg, Y., Materials Science Reports 5., 3 (1990).Google Scholar
2. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Gr. 27, 118 (1974).Google Scholar
3. Matthews, J.W., in Epitaxial Growth Part B, (Matthews, J.W., ed., Academic Press, NY, 1975), p. 559.Google Scholar
4. Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 5, 1325 (1987);.2, 852 (1988).Google Scholar
5. Rudy, M. and Sauthoff, G., Mat. Sci. Eng. 81, 525 (1986).Google Scholar
6. Keller, R.R., Wowchak, A.M., Angelo, J.E., Kuznia, J.N., Cohen, P.I. and Gerberich, W.W., J. Elect. Mater. 20, 319 (1991).Google Scholar
7. Spencer, J.P., Humphreys, C.J. and Hirsch, P.B., Phil. Mag. 26, 193 (1972).Google Scholar
8. Angelo, J.E., Kuznia, J.N., Wowchak, A.M., Cohen, P.I. and Gerberich, W.W., Mat. Res. Soc. Symp. Proc., in press (1991).Google Scholar
9. Angelo, J.E., Kuznia, J.N., Wowchak, A.M., Cohen, P.I. and Gerberich, W.W., Appl. Phys. Lett., in press (1991).Google Scholar
10. Angelo, J.E. and Gerberich, W.W., submitted to Ultramicroscopy, (1991).Google Scholar
11. Angelo, J.E. and Gerberich, W.W., submitted to Phil. Mag., (1991).Google Scholar
12. Hirsch, P.B., Howie, A., Nicholson, R., Pashley, D.W. and Whelan, M.J., Electron Microscopy of Thin Crystals, 2nd ed. (Krieger Publishing Co., Malabar Florida, 1977).Google Scholar
13. Allison, D.L., in Epitaxial Growth Part B, (Matthews, J.W., ed., Academic Press, NY, 1975), p. 365.Google Scholar
14. Keller, R.R., Angelo, J.E., Wowchak, A.M., Cohen, P.I. and Gerberich, W.W., Mat. Res. Soc. Symp. Proc., in press (1991).Google Scholar
15. Joy, D.C., Newbury, D.E. and Davidson, D.L., J. Appl. Phys. 53, R81 (1982).Google Scholar
16. Merwe, J.H. van der, Woltersdorf, J. and Jesser, W.A., Mat. Sci. Eng. 81, 1 (1986).Google Scholar
17. Woltersdorf, J. and Pippel, E., Phys. Stat. Sol. (a) 78, 475 (1983).Google Scholar
18. Pippel, E. and Woltersdorf, J., Phys. Stat. Sol. (a) 79, 189 (1983).Google Scholar