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Stability of the Fullerenes Thin Film Deposited on the SI(100) Surface

Published online by Cambridge University Press:  15 February 2011

H. Rafii-Tabar ,
Y. Kawazoe  and
H. Kamiyama
H. Rafii-Tabar
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
Y. Kawazoe
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
H. Kamiyama
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
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Abstract

We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayer film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM- based experiment for this system.

Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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References

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