Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T09:47:54.498Z Has data issue: false hasContentIssue false
  • English
  • Français

Sol-Gel Growth of High-Quality Pb(Zr,Ti)O3 Films on RUO2 Using Seed Layers

Published online by Cambridge University Press:  10 February 2011

G. J. Norga ,
Laura Fè ,
D. J. Wouters ,
A. Bartic  and
H.E. Maes
G. J. Norga
Affiliation:
IMEC vzw, Kapeldreef 75, Leuven, Belgium
Laura Fè
Affiliation:
IMEC vzw, Kapeldreef 75, Leuven, Belgium
D. J. Wouters
Affiliation:
IMEC vzw, Kapeldreef 75, Leuven, Belgium
A. Bartic
Affiliation:
IMEC vzw, Kapeldreef 75, Leuven, Belgium
H.E. Maes
Affiliation:
IMEC vzw, Kapeldreef 75, Leuven, Belgium
Get access

Abstract

New approaches for improving fatigue performance of sol-gel PZT based ferroelectric capacitors with RuO2 electrodes are discussed. The use of thin (∼5 nm) high-Ti PZT seed layer was found to be effective for improving fatigue performance. For an optimized seedlayer thickness, FECAPs with excellent fatigue characteristics (less than 10% decrease in Pr after 1011 cycles) were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 307
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wouters, D., Norga, G. J., Beckers, F., Bogaerts, L. and Maes, H. E., to be published.Google Scholar
[2] Krusin-Elbaum, L., Wittmer, M., J. Electrochem. Soc. 135, 2610 (1988).Google Scholar
[] Krusin-Elbaum, L., Wittmer, M., Yee, D. S., Appl. Phys. Lett. 50, 1879 (1987).Google Scholar
[4] Wang, Q., Yang, K.-A., Franciosi, A., Evans, D. F., Gladfelter, W. L., Mater. Res. Soc. Proc. 4, 151 (1996).Google Scholar
[5] Kim, Y. T., Appl. Phys. Lett. 70, 209 (1997).Google Scholar
[6] Weaver, L., Griswold, E. M., McIntyre, D. S., Sayer, M., Microel. Eng. 29, 29 (1995).Google Scholar
[7] Lee, J.-G., Kim, Y. T., Min, S.-K., J. Appl. Phys. 77, 547 (1995).Google Scholar
[8] Yoshikawa, K., Kimura, T., Noshiro, H., Otani, S., Yamada, M., Furumura, Y., Jpn. J. Appl. Phys., L867 (1994).Google Scholar
[9] Grill, A., Kane, W., Viggiano, J., Brady, M., Laibowitz, R., J. Mater. Res. 7, 260 (1992).Google Scholar
[10] Maiwa, H., Ichinose, N., Okazaki, K., Jpn. J. Appl. Phys., 522 (1994).Google Scholar
[11] Watanabe, K., Tressler, J. F., Sadamoto, M., Isobe, C., Tanaka, M., J. Electrochem. Soc. 14, 008 (1996).Google Scholar
[12] Choi, D. K., Choi, J. Y., Won, J. H., Paek, S. H., Mater. Res. Soc. Proc. 4, 45 (1996).Google Scholar
[13] Sakiyama, K., Onishi, S., Ishihara, K., Orita, K., Kajiyama, T., Hosoda, N., Hara, T., J. Electrochem. Soc. 140, 84 (1993).Google Scholar
[14] Kolawa, E., So, F. C. T., Pan, E. T.-S., Nicolet, M.-A., Appl. Phys. Lett. 50, 854 (1987).Google Scholar
[15] Scott, C. M., Bai, G.-R., Bjorlander, C., Wang, A., presented at ISIF '97, Santa Fe, New Mexico, March 2-5, 1997.Google Scholar
[16] Al-Shareef, H. N., Auciello, O., Kingon, A. I., J. Appl. Phys. 77, 2146 (1995).Google Scholar
[17] Al-Shareef, H. N., Tuttle, B. A., Warren, W. L., Headley, T. J., Dimos, D., Voigt, J. A., Nasby, R. D., L., , J. Appl. Phys. 79, 101 (1996).Google Scholar
[18] Onishi, S., Nagata, M., Mitarai, S., Ito, Y., Kudo, J., Sakiyama, K., Desu, S., Bhat, H.D., Vijay, D. P., Hwang, Y., J. Electrochem. Soc. 145, 256 (1998).Google Scholar
[19] Lee, J. J., Thio, C. L., Desu, S. B., J. Appl. Phys. 78, 507 (1995).Google Scholar
[20] Kim, S. H., Hong, J. G., Gunter, J.C., Lee, H. Y., Streiffer, S. K., Kingon, A. I., MRS Symp. Proc. 493, 11 (1998).Google Scholar
[21] Wouters, D. J., Willems, G., Lee, E.-U, Maes, H. E., Integrated Ferroelectrics 15, 79 (1997).Google Scholar