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SiO2 Growth and Annealing by Lamp heating

Published online by Cambridge University Press:  26 February 2011

Z. A. Weinberg ,
T. N. Nguyen ,
S. A. Cohen  and
R. Kalish
Z. A. Weinberg
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598.
T. N. Nguyen
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598.
S. A. Cohen
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598.
R. Kalish
Affiliation:
Solid State Institute, Technion, Haifa, Israel.
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Abstract

This paper reports the results of a study of thin SiO2 growth and annealing in a lamp heater (Heatpulse). Good quality 5–10 mn SiO2 films on silicon have been obtained. For good oxides the average destructive breakdown- field was 13 MV/cm and very few or no low-field breakdowns were found. The breakdown statistics were obtained with Al gate capacitors and by a current staircase-ramp technique which is described in the paper. Processing with a single oxidation step, oxidationannealing, and oxidation-annealing-oxidation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 327
Copyright
Copyright © Materials Research Society 1986

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References

1. Schmidt, P.F., Solid State Technology, June 1983, p. 148.Google Scholar
2. Weinberg, Z.A., Young, D.R., Calise, J.A., Cohen, S.A., DeLuca, J.C., and Deline, V.R., Appl. Phys. Lett. 45, 1204 (1984).Google Scholar
3. Nulman, J., Krusius, J.P., and Gat, A., IEEE Electron Device Lett. EDL–6, 205 (1985).CrossRefGoogle Scholar
4. Moslehi, M.M, Saraswat, K.C., and Shatas, S.C., Appl. Phys. Lett. 47, 1113 (1985).Google Scholar
5. Lai, S.K., Young, D.R., Calise, J.A., and Feigl, F.J., J. Appl. Phys. 52, 5691 (1981).Google Scholar
6. Aslam, M., Balk, P., and Young, D.R., Solid-State Electronics, 27, 709 (1984).Google Scholar