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Single Crystalline Germanium Island on Silicon Dioxide by Zone Melting

Published online by Cambridge University Press:  22 February 2011

M. Takai ,
T. Tanigawa ,
K. Gamo  and
S. Namba
M. Takai
Affiliation:
Faculty of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
T. Tanigawa
Affiliation:
Faculty of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Faculty of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
S. Namba
Affiliation:
Faculty of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
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Abstract

Single crystalline germanium islands on SiO2 have been formed by zone melting with graphite strip heaters. Two types of geometrical patterns for islands were successfully used to obtain large single crystalline islands. Most germanium islands were found to be single crystal and the predominant orientation was (100). Electron concentrations of 1016 - 1018/cm3 with Hall mobility of 3 × 103 − 1 × 103 cm2 /Vsec were obtained for single crystalline germanium islands. Gallium Arsenide layers, grown by molecular beam epitaxy, on the germanium islands were found to emit photoluminescence, the intensity of which was almost comparable to that of gallium arsenide layers on bulk germanium crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 397
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. See for example: Mat. Res. Soc. Symp. Proc. 1 (1981);Google Scholar
1a.Mat. Res. Soc. Symp. Proc. 4 (1982);Google Scholar
1b.Mat. Res. Soc. Symp. Proc. 13 (1983)Google Scholar
2.Fan, J.C.C., Ziegler, H.J., Gale, R.P., and Chapman, R.L., Appl. Phys. Lett. 36, 158 (1980)Google Scholar
3.Gilbert, G.B., Poehler, T.O., and Miller, C.F., J. Appl. Phys. 32, 1597 (1961)Google Scholar
4.Maserjian, J., Solid–State Electron. 6, 477 (1963)Google Scholar
5.Namba, S., J. Appl. Phys. 37, 1929 (1966)Google Scholar
6.Geis, M.W., Smith, H.I., Tsaur, B-Y., Fan, J.C.C., Silversmith, D.J., and Mountain, R.W., J. Electrochem. Soc. 129, 2813 (1982)Google Scholar
7.Sakano, K., Moriwaki, K., Aritome, H., and Namba, S., Japan. J. Appl. Phys. 21, L636 (1982)Google Scholar
8.Atwater, H.A., Smith, H.I., and Geis, M.W., Appl. Phys. Lett. 41, 747 (1982)Google Scholar
9. Camp, J. Electrochem. Soc. 10, 586 (1955)Google Scholar
10.Sze, S.M. and Irvin, J.C., Solid State Electron. 11, 599 (1968)Google Scholar
11.Fuller, C.S. and Doleiden, F.H., J. Phys. Chem. Solids 19, 251 (1961)Google Scholar
12.Tsaur, B-Y., Fan, J.C.C., and Geis, M.W., Appl. Phys. Lett. 40, 322 (1982)Google Scholar