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Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves

Published online by Cambridge University Press:  21 February 2011

H.M. Cox ,
DM. Hwang ,
M.R. Frei ,
C. Caneau ,
M. Grundmann  and
D. Bimberg
H.M. Cox
Affiliation:
Bellcore, Red Bank, NJ, 07701
DM. Hwang
Affiliation:
Bellcore, Red Bank, NJ, 07701
M.R. Frei
Affiliation:
Bellcore, Red Bank, NJ, 07701
C. Caneau
Affiliation:
Bellcore, Red Bank, NJ, 07701
M. Grundmann
Affiliation:
Technische Universitat Berlin, PN 5-2, Hardenbergstr. 36, D 1000 Berlin 12, Germany.
D. Bimberg
Affiliation:
Technische Universitat Berlin, PN 5-2, Hardenbergstr. 36, D 1000 Berlin 12, Germany.
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Abstract

Selective-area epitaxy was investigated by Cl-transport VPE growth of GaxIn1-xAs in features etched in a (001) InP wafer through windows of an SiCO2 mask. Growth was conducted simultaneously on masked samples with grooves oriented along the [110] and the [110] directions and a planar InP wafer oriented 3° off (001). The structures were studied with optical and cross-sectional transmission electron microscopy (TEM), X-ray diffraction, photoluminescence (PL), and cathodoluminescence (CL). Excellent surface morphology, luminescence, and near-lattice-matching were simultaneously achieved for all samples. TEM cross-sections demonstrate that the [110] and even the [110] dove-tail grooves are filled in a wellordered manner without visible defects or undue strain. CL imaging in crosssection and planview demonstrates the trend in both samples for lower bandgap material to be found in the upper center portion of the groove.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 561
Copyright
Copyright © Materials Research Society 1994

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