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Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient

Published online by Cambridge University Press:  10 February 2011

W. Lerch ,
M. Glück ,
N. A. Stolwijk ,
H. Walk ,
M. Schäfer ,
S. D. Marcus ,
D. F. Downey ,
J. W. Chow  and
H. Marquardt
W. Lerch
Affiliation:
STEAG AST Elektronik GmbH, Dornstadt, Germany, [email protected]
M. Glück
Affiliation:
STEAG AST Elektronik GmbH, Dornstadt, Germany
N. A. Stolwijk
Affiliation:
Institut für Metallforschung, Westfälische Wilhelms-Universität Miunster, Germany
H. Walk
Affiliation:
STEAG AST Elektronik GmbH, Dornstadt, Germany CADwalk, Allmendingen, Germany
M. Schäfer
Affiliation:
CADwalk, Allmendingen, Germany
S. D. Marcus
Affiliation:
STEAG AST Elektronik, Tempe (AZ), USA
D. F. Downey
Affiliation:
Varian Ion Implant Systems, Gloucester (MA), USA
J. W. Chow
Affiliation:
Varian Ion Implant Systems, Gloucester (MA), USA
H. Marquardt
Affiliation:
Silvaco Data Systems, Munich, Germany
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Abstract

Rapid Thermal Annealing (RTA) is indispensable for the formation of ultra-shallow source/drain junctions. To improve the annealing conditions, a fundamental understanding of the influences on the diffusion/activation process is necessary. Ion implantations of 1 keV boron at a dose of Φ≈1 I.1015 cm-2 are annealed in a SHS2800E RTP-system under controlled concentrations of oxygen in nitrogen ambient (0-1 ppm up to 1%). Concentration-depth profiles, measured by Secondary Ion Mass Spectroscopy (SIMS), are simulated within the framework of the kickout model involving diffusion enhancement via supersaturation of silicon self-interstitials. The validity of this interpretation is supported by the simulated results which are in good agreement with expenimental data. After RTA for 10 s at 1050°C the junctions are varying within a range of 800Å to 1400Ådepending on the annealing ambient. The results of the simulation yield finite values of self-interstitial supersaturation as a function of the oxygen concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 237
Copyright
Copyright © Materials Research Society 1998

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References

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