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Silicon-Carbon Random Alloy Epitaxy on Silicon by Rapid Thermal Chemical Vapor Deposition
Published online by Cambridge University Press: 22 February 2011
Abstract
We have grown dilute Si-C epitaxial layers on Si (100) substrates at 800°C with a RTCVD process using SiH4 and C3H8. C atoms can be kinetically stabilized in interstitial sites in the Si lattice at relatively high temperatures if process parameters, such as growth rate and C/Si flux ratio, are optimized.
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- Copyright © Materials Research Society 1994
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