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Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

Published online by Cambridge University Press:  16 February 2011

R. Martins ,
I. Ferreira ,
E. Fortunato  and
M. Vieira
R. Martins
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon, CEMOP/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal.
I. Ferreira
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon, CEMOP/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal.
E. Fortunato
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon, CEMOP/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal.
M. Vieira
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon, CEMOP/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal.
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Abstract

Silicon oxycarbide microcrystalline layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity, σd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 55
Copyright
Copyright © Materials Research Society 1994

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References

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