No CrossRef data available.
Article contents
Silicon Membrane Studies of Point Defect Transport Kinetics During Thermal Oxidation
Published online by Cambridge University Press: 26 February 2011
Abstract
Self-interstitial transport kinetics in float-zone and Czochralski silicon was studied during thermal oxidation of silicon membranes. Bulk recombination of interstitials is higher in the CZ than in the FZ silicon. The low apparent interstitial diffusivity obtained in this study is explained by a bulk effect.
- Type
- Articles
- Information
- Copyright
- Copyright © Materials Research Society 1987