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Shallow Junctions Formed by the Thermal Redistribution of Implanted Arsenic into TiSi2

Published online by Cambridge University Press:  26 February 2011

D. X. Cao ,
H. B. Harrison  and
G. K. Reeves
H. B. Harrison
Affiliation:
Microelectronics Technology Centre (MTC), Royal Melbourne Institute of Technology, 124 LaTrobe Street, Melbourne, Australia 3000.
G. K. Reeves
Affiliation:
Telecom Research Laboratories, 770 Blackburn Road, Clayton, Australia, 3163.
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Abstract

Following the implantation of arsenic into titanium disilicide films on p type silicon, Rutherford backscattering has shown that rapid thermal vacuum processing (RTVP) causes the arsenic to diffuse toward the silicide/silicon interface, with an accumulation at the interface and with a sharp shallow diffusion into the silicon. The effect of the implant and anneal on the sheet resistance of the silicide and underlying silicon have been investigated’ and it is shown that anneal times of thirty seconds at 900 °C produce acceptable shallow junctions suitable for device type applications without significant deterioration in silicide electrical or physical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 737
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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