Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T17:31:55.397Z Has data issue: false hasContentIssue false
  • English
  • Français

Self-Aligned Nanocrystalline Silicon Thin-Film Transistor With Deposited n+ Source/Drain Layer

Published online by Cambridge University Press:  01 February 2011

I-Chun Cheng  and
Sigurd Wagner
I-Chun Cheng
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Electro-Optical Engineering, National Taiwan University, Min-Da Hall, R621,, No.1, Sec.4, Roosevelt Road, Taipei, 10617, Taiwan, +886-2-3366-9648, +886-2-2367-7467
Sigurd Wagner
Affiliation:
[email protected], Princeton University, Department of Electrical Engineering and PRISM, Princeton, NJ, 08544, United States
Get access

Abstract

We demonstrated self-aligned nanocrystalline silicon (nc-Si:H) n-channel thin film transistors (TFTs) with directly deposited n+ layer. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The TFTs were made in a staggered top-gate, bottom-source/drain geometry with a seed layer underneath. The self-alignment of top-gate to the bottom-source/drain was achieved by backside exposure photolithography through the glass substrate and the silicon layers, followed by a lift-off process. An extent of gate to source/drain overlap of 1.5 mm was obtained. The self-aligned TFTs have similar characteristics to their non-self-aligned counterpart. This result represents an important step toward directly deposited nc-Si:H TFT backplanes on plastic substrates.

Keywords

Sichemical vapor deposition (CVD) (deposition)electronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A11-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chen, Y. and Wagner, S., Appl. Phys. Lett., 75, 1125 (1999).Google Scholar
2 Cheng, I-C. and Wagner, S., Appl. Phys. Lett., 80, 440 (2002).Google Scholar
3 Cheng, I-C., Kattamis, A., Long, K., Sturm, J. C., and Wagner, S., J. Soc. Info. Disp., vol. 13/7, 563 (2005).Google Scholar
4 Kuo, Y., J. Electrochem. Soc, 139, 1199 (1992).Google Scholar
5 Thomasson, D. B. and Jackson, T. N., IEEE Electron Device Lett., 19, 124 (1998).Google Scholar
6 Yang, C. S., Read, W. W., Arthur, C., Srinivasan, E., and Parsons, G. N., IEEE Electron Device Lett., 19, 180 (1998).Google Scholar
7 Cheng, I-C., Kattamis, A. Z., Long, K., Sturm, J. C., and Wagner, S., IEEE Electron Device Lett., 27, 166 (2006).Google Scholar
8 Tzolov, M., Finger, F., Carius, R. and Hapke, P., J. Appl. Phys., 81 (11), 7376 (1997).Google Scholar
9 Mulato, M., Chen, Y., Wagner, S. and Zanatta, A. R., J.Non-Cryst. Solids, 266-269, 1260 (2000).Google Scholar
10 Platz, R. and Wagner, S., Appl. Phys. Lett., 73 (9), 1236 (1998).Google Scholar
11 Alpuim, P., Chu, V., and Conde, J. P., J. Vac. Sci. Technol. A, 19, 2328 (2001).Google Scholar
12 Cheng, I-C., Allen, S., and Wagner, S., J. Non-Crystal. Solids, 338-340, 720 (2004).Google Scholar