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Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates

Published online by Cambridge University Press:  26 February 2011

R. Ramesham ,
T. Roppel  and
C. Ellis
R. Ramesham
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, AL 36849-5201
T. Roppel
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, AL 36849-5201
C. Ellis
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, AL 36849-5201
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Abstract

Polycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to selectively damage the polished substrates by ultrasonic agitation. Optical and scanning electron microscopy is used to study selectivity and morphology of as-grown diamond thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 241
Copyright
Copyright © Materials Research Society 1991

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