Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-04T17:53:05.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Growth of GaP on Si by Metal Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

J. S. Lee ,
J. Salzman ,
D. Emerson ,
J. R. Shealy  and
J. M. Ballantyne
J. S. Lee
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
J. Salzman
Affiliation:
On leave from Technion, 32000 Haifa, Israel
D. Emerson
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
J. R. Shealy
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
J. M. Ballantyne
Affiliation:
School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY14853
Get access

Abstract

Extremely flat layers of GaP were grown on 4° miscut (100) Si substrates by selective Metal- Organic Vapor Phase Epitaxy. An enhancement of Re@3 was measured at the growth edges, which corresponds to a Sherwood number of 12.5. Defect-free growth is obtained at the edge of the silicon nitride mask. A gradual transition to growth with a large defect density is observed with increasing distance from the mask edges. In the defect free areas, a recovery of the (100) crystal plane is consistently measured on top of the grown mesas. This seems to indicate a pure layer-bylayer homoepitaxial mode (Frank-van der Merve mode) after the island mode nucleation (Volmer- Weber mode) on Silicon is completed, forming a thin smooth seed layer. High Resolution TEM shows a uniform Si-GaP transition. Micro-Raman Spectroscopy with spatial resolution of ˜1 micrometer was performed to assess the crystal quality as a function of the distance from the growth edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 301
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Suzuki, T., Soga, T., Jimbo, T., Umeno, M. J. Crystal Growth 115, 158 (1995).Google Scholar
2. Soga, T., Jimbo, T., Umeno, M., J. Crystal Growth 146, 554 (1995).Google Scholar
3. Salzman, J., “Selective Epitaxial Growth of III-V Semiconductor” presented at the Danish Physical Soc. Ann. Meet., Odense, June 2–3, 1994.Google Scholar
4. Meyerson, B.S., Himpsel, F.J., Uram, K.J., Appl. Phys. Lett. 57, 1034 (1990).Google Scholar
5. Pitts, B.L., Emerson, D.T., Matragrano, M.J., Whittingham, K.L., Butterfield, B.P., Shealy, J.R., Proc. of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits p 122 (1993).Google Scholar
6. Kroemer, H., J. Crystal Growth 81, 193 (1987).Google Scholar
7. Anastassiadou, A., Raptis, Y.S., and Anastassakis, E., J. Appl. Phys. 60, 2924 (1986).Google Scholar