Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-02-04T17:53:22.388Z Has data issue: false hasContentIssue false
  • English
  • Français

Relaxation of Thermal Stresses in Al-Films

Published online by Cambridge University Press:  26 February 2011

H.G. Bohn ,
W. Pill ,
K.-H Robrock  and
W. Schilling
H.G. Bohn
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 5170 Jülich, Federal Republic of Germany
W. Pill
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 5170 Jülich, Federal Republic of Germany
K.-H Robrock
Affiliation:
Now at: Commission of the European Communities, Brussels
W. Schilling
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 5170 Jülich, Federal Republic of Germany
Get access

Abstract

The time and temperature dependent mechanisms underlying the relaxation of thermally induced stresses in Al-films on quartz substrates have been investigated for film thicknesses in the range between 0.4 and 4.2 μm. Film stresses were determined by a high resolution capacitive technique from the bending displacement of the specimens. By employing a lamp furnace heating rates of 10°C/sec could be achieved. This test equipment allowed the investigation of thermally induced film stresses between room temperature and 450°C and in the time range between 10 sec and several hours. Similar temperature programms were run in situ in a scanning electron microscope in order to observe the concommitant changes of the surface morphologies.

The experiments show that a major fraction of 50 to 70% of the thermal stress recovers instantaneously by plastic flow. This defines a yield stress for the Al-films which is found to be inversely proportional to the film thickness and to vary linearly with temperature. The magnitude of the yield strength under tension is larger by a factor 1.7 compared to that under compression.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 255
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Brenner, A. and Senderhoff, S., Journal of Research of the NBS 42, 105 (1949).Google Scholar
2. Pill, W., PhD thesis, RWTH Aachen, 1991; Berichte des Forschungszentrums Jülich, Jül-2436 (1991).Google Scholar
3. Segmüller, A. and Murakami, M., Treat. on Mat. Sci. and Eng. 27, 143 (1988).Google Scholar
4. Sinha, A.K. and Sheng, T.S., Thin Solid Films 48, 117 (1978).Google Scholar
5. Doerner, M.F., Gardner, D.S., and Nix, W.D., J. Mater. Res. 1, 845 (1986).Google Scholar
6. Castro, P.L. and Campbell, J.F., J. Electrochem. Soc. 115, 332 (1968).Google Scholar
7. Sinha, A.K., Levinstein, H.J., and Smith, T.E., J. Appl. Phys. 49, 2423 (1978).Google Scholar
8. Prieler, M., Surface and Coatings Technology 43/44, 963 (1990).Google Scholar
9. Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. on Electron Devices 34, 689 (1987).Google Scholar