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Rapid Thermal Annealing of Se-Implanted Gallium Arsenide

Published online by Cambridge University Press:  28 February 2011

T. Inada ,
K. Miyamoto  and
A. Nishida
T. Inada
Affiliation:
College of Engineering, Hosei University, Kajino-cho, Koganei, Tokyo 184, Japan
K. Miyamoto
Affiliation:
College of Engineering, Hosei University, Kajino-cho, Koganei, Tokyo 184, Japan
A. Nishida
Affiliation:
College of Engineering, Hosei University, Kajino-cho, Koganei, Tokyo 184, Japan
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Extract

Rapid thermal annealing by using a graphite strip heater has been employed to activate Se atoms implanted in either In-doped or undoped LEC GaAs. Doping profile measurements have shown that highly doped n-type layers with the maximum carrier concentration of 1.2E19/cm3 are formed in the In-doped GaAs implanted with 100keV Se ions at room temperature after rapid thermal annealing at 1000°C for 10 sec. Residual defects existing in Se-implanted layers have been examined. The results show that the introduction of dislocations into Se-implanted layers during post-implant annealing is minimized in the In-doped GaAs samples treated by rapid thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 431
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Inada, T. and Hara, T., Solid State Tech. 22, 69(1979)Google Scholar
[2] Eisen, F.H., Radia. Eff. 47, 99(1980)Google Scholar
[3] Donnelly, J.P., Nucl. Instr. and Meth. 182/183, 553(1981)Google Scholar
[4] Stephens, K.G., Nucl. Instr. and Meth. 209/210, 589(1983)Google Scholar
[5] Davies, D.E., Nucl. Instr. and Meth. B7/8, 387(1985)Google Scholar
[6] Davies, D.E., Mat. Res. Soc. Symp. Proc. Vol.45, 261(1985)Google Scholar
[7] Inada, T.,Miyamoto, K., and Kitahara, M., Nucl. Instr. and Meth. B19/20, 413(1987)Google Scholar
[8] Inada, T.,Ohkubo, T.,Sawada, S.,Hara, T., and Nakajima, , J. Electrochem. Soc. 122, 651(1975)Google Scholar
[9] Note that no small dislocation loops were detected in umimplanted Indoped GaAs substrates before or after annealing at 950°C.Google Scholar
[10] Donnelly, J.P., Inst. Phys. Conf. Ser. 33b, 166(1977)Google Scholar
[11] Inada, T. and Sugiyama, T., J. appl. Phys. 52, 6986(1986)Google Scholar
[12] Yamamoto, Y.,Inada, T.,Sugiyama, T., and Tamura, T., J.appl.Phys. 53, 276(1982)Google Scholar