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Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

H. J. Stein
H. J. Stein*
Affiliation:
Sandia National LaboratoriesAlbuquerque,New Mexico 87185
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Abstract

Infrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 ± 0.2 eV for a process leading to O-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O2-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600°C) used for production of silicon-on-insulator structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 341
Copyright
Copyright © Materials Research Society 1987

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References

LIST OF REFERENCES:

1) Lam, H. W., Tasch, A. F. Jr., and Pinizzotto, R. F., VLSI Electronics: Microstructure Science, Vol. 1, Academic Press Inc. (1982) Chapt. 1 p. 1.Google Scholar
2) Stein, H. J. and Peercy, P. S., in Materials Research Society Symposium Proceedings, Vol. 13, edited by Narayan, J., Brown, W. L., and Lemons, R. A. (Elsevier, New York, 1983) p. 229;Google Scholar
2a Stein, H. J., Proc. of 14th International Conf. on Defects in Semiconductors Part 3, Vol. 10–12, edited by von Bardeleben, H. J. (Trans Tech Publications, Switzerland-Germany-UK-USA, 1986) p.935.Google Scholar
3) Tipping, A. K., Newman, R. C., Newton, D. C. and Tucker, J. H., Proc. of 14th International Conf. on Defects in Semiconductors Part 3, Vol. 10–12, edited by von Bardeleben, H. J. (Trans Tech Publications, Switzerland-Germany-UK-USA,1986) p. 887.Google Scholar
4) Svensson, B. G. and Lindstrom, J. L., Phys. Rev. B 34, 8709 (1986).Google Scholar
5) Stein, H. J., Hahn, S. K. and Shatas, S. C., J. Appl. Phys. 59, 3495 (1986).Google Scholar
6) Haynes, T. E., Picraux, S. T. and Chu, W. K., Materials Research Society Symposium A, Boston, MA, (Dec. 1986), (to be published in proceedings Vol.).Google Scholar
7) Newman, R. C. “Infrared Studies of Crystal Defects” (Taylor and Francis LTD 1969), Chapters 6 & 7.Google Scholar
8) ASTM F121-83.Google Scholar
9) Adekoya, W. O., Muller, J. C. and Siffert, P., Appl. Phys. A42, 227 (1987).Google Scholar
10) Mikkelsen, J. C., Appl. Phys. Lett. 40, 336 (1982).Google Scholar