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Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon

Published online by Cambridge University Press:  28 February 2011

R. Angelucci ,
E. Gabilli ,
R. Lotti ,
P. Negrini ,
M. Servidori ,
S. Solmi  and
M. Anderle
R. Angelucci
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
E. Gabilli
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
R. Lotti
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
P. Negrini
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
M. Servidori
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
S. Solmi
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 1 - 40126 Bologna (Italy)
M. Anderle
Affiliation:
Divisione di Scienza dei Materiali, IRST - 38050 Povo, Trento (Italy)
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Abstract

Transient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.

A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 505
Copyright
Copyright © Materials Research Society 1987

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References

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