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Quantitative Characterization of the Interface Between a V2O3 Layer and Cu3Au (001) by Cs Corrected HREM

Published online by Cambridge University Press:  31 January 2011

Hector Alfredo Calderon
Affiliation:
[email protected]@hotmail.com, IPN, Ciencia de Materiales-ESFM, UPALM Ed. 9 Zacatenco, Mexico DF, Mexico, 07738, Mexico, 5215516916964, 525521572506
Horst Niehus
Affiliation:
[email protected], Humboldt Universität zu Berlin, Inst. für Physik, Berlin, Germany
B. Freitag
Affiliation:
[email protected], FEI Company, Eindhoven, Netherlands
D. Wall
Affiliation:
[email protected], FEI Company, Eindhoven, Netherlands
Fernando Stavale
Affiliation:
[email protected], Div. Metrologia de Materiais (DIMAT), Xerem, Brazil
Carlos Achete
Affiliation:
[email protected], INMETRO, DIMAT, Rio de Janeiro, Brazil
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Abstract

Vanadium oxides are materials of interest due to their electronic, magnetic and catalytic properties. In the case of V2O3 and Cu3Au, the interfacial bonding is rather difficult to describe since the two component materials have strongly different electronic structures. Thus a local investigation of the interface becomes important. In this investigation, the incoherent interface between a V2O3 (0001, corundum structure) layer and a Cu3Au (001, L12 structure) substrate is characterized with the help of image corrected high resolution electron microscopy (HRTEM) and focal series reconstruction in order to investigated both the true position of atoms and the nature of the atomic species. Semi-quantitative results can be shown for the chemical composition of columns and strains at one side of the interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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