Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-04T17:58:04.170Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Porous Silicon with Photoluminescence Enhanced by a Remote-Plasma Treatment

Published online by Cambridge University Press:  28 February 2011

Y. Xiao ,
M. J. Heben ,
J. I. Pankove  and
Y. S. Tsuo
Y. Xiao
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401 University of Colorado, Dept. of Electrical and Computer Engineering, Boulder, CO 80309
M. J. Heben
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
J. I. Pankove
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401 University of Colorado, Dept. of Electrical and Computer Engineering, Boulder, CO 80309
Y. S. Tsuo
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Get access

Abstract

We have developed remote-plasma and argon-ion laser-illumination treatments that enhance and stabilize the photoluminescent emission from porous Si (PS) that was electrochemically etched and thermally annealed. Infrared absorption spectroscopy revealed that the bonded oxygen content in the film was increased and the density of surface silicon dihydride bonds was reduced by these processing steps. The photoluminescence (PL) intensity of the treated films was initially about 15 times higher than that of the as—etched films, and increased further with the time of laser irradiation in air until a steady—state intensity was reached. The emission from the treated samples increases with decreasing temperature to a maximum intensity at about 100 K. Below 100 K, the photoluminescence intensity of the treated PS samples remains constant with decreasing temperature down to 7.7 K, whereas the as—etched samples, as well as siloxene, show a rapid decrease in photoluminescence intensity with decreasing temperature in this temperature range. Electron spin resonance data show that dangling bond densities in annealed PS films are reduced by the remote-plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 317
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Vial, J.C., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., Muller, F., and Restain, R., Phys. Rev. B 45, 14171 (1992).Google Scholar
2. Tischler, M.A., Collins, R.T., Stathis, J.H., and Tsang, J.C., Appl. Phys. Lett. 60, 639 (1992).Google Scholar
3. Suemune, I., Noguchi, N., and Yamanishi, M., Jpn. J. Appl. Phys. 31, L494 (1992)Google Scholar
4. Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F., and Lehmann, V., Appl. Phys. Lett., 61, 943 (1992).Google Scholar
5. Pankove, J.I., Semiconductors and Semimetals, Vol. 34, eds. Pankove, J.I. and Johnson, N.M., Academic Press, Inc., 1991.Google Scholar
6. Khan, B.A., Pinker, R., Shahzad, K., and Rossi, B., Mat. Res. Soc. Proc. 256, 143 (1992).Google Scholar
7. Xiao, Y., Heben, M.J., McCullough, J., Tsuo, Y.S., Pankove, J.I., and Deb, S., submitted to Appl. Phys. Lett.Google Scholar
8. Heben, M.J., Xiao, Y., McCullough, J.M., Tsuo, Y.S., Pankove, J.I., and Deb, S.K., to be published in APS Conference Proceedings.Google Scholar
9. Gupta, P., Colvin, V.L., and George, S.M., Phys. Rev B 37, 8234 (1988).Google Scholar
10. Pai, P.G., Chao, S.S., Takagi, Y., and Lukovsky, G., J. Vac. Sci. Technol. A. 4, 689 (1986).Google Scholar
11. Tsu, D.V., Lucovsky, G., and Davidson, B.N., Phys. Rev. B 40, 1795 (1989).Google Scholar
12. Bellet, D., Dolino, G., Ligeon, M., and Blanc, P., J. Appl. Phys. 71, 145 (1992).Google Scholar
13. Cole, M.W., Harvey, J.F., Lux, R.A., Eckart, D.W., and Tsu, R., Appl. Phys. Lett. 60, 2800 (1992).Google Scholar
14. Perry, C.H., Lu, F., Namavar, F., Kalkhoran, N.L., and Soref, R.A., Mat. Res. Soc. Proc. 256, 153 (1992).Google Scholar
15. Harvey, J.F., Shen, H., Lux, R.A., Dutta, M., Pamulapati, J., and Tsu, R., Mat. Res. Soc. Proc. 256, 174 (1992).Google Scholar
16. Pankove, J.I., Optical Processes in Semiconductors, Dover Publications, Inc. 1971.Google Scholar
17. Hirabayashi, I., Morigaki, K., and Yamanaka, S., J. Phys. Soc. Jap. 52, 671 (1983).Google Scholar
18. Brant, M.S., Fuchs, H.D., Stutzmann, M., Weber, J., and Cardona, M., Solid. State Commun. 81, 307 (1992).Google Scholar
19. Street, R.A., Hydrogenated Amorphous Silicon, Cambridge University Press 1991.Google Scholar
20. Sanders, G.D. and Chang, Yia-Chung, Appl. Phys. Lett. 60, 2525 (1992).Google Scholar