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Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon

Published online by Cambridge University Press:  28 February 2011

H.B. Harrison ,
A.P. Pogany  and
Y. Komem
H.B. Harrison
Affiliation:
Microelectronics Technology Centre,Rmit,Melbourne,Australia.
A.P. Pogany
Affiliation:
Microelectronics Technology Centre,Rmit,Melbourne,Australia.
Y. Komem
Affiliation:
Dept. of Materials Engineering,Technion,Israel.
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Abstract

Polycrystalline silicon films have been amorphized by implantation with 100keV Ga ions of doses 0.3 and 6×1015cm−2. These films were subsequently recrystallized using either a furnace for longer times lower temperature (∼30 mins, 600° C) or rapid thermal processing (RTP) for shorter times higher temperatures ( ≤ 30 sec, 800° C, 900° C) in an endeavour to suppress any long range movement of the Ga during the anneal phase. It is found that for both the furnace and RTP for temperatures ≤ 800°C no significant movement is observed and that the lower temperature anneal for the highest dose produces the highest electrical conductivity. By contrast however, annealing at 900° C, even though the initial conductivity is higher than for any other anneal we observe a significant reduction with time and extremely rapid movement of the dopant species throughout the original poly layer. An initial rationale for this behaviour is proposed in terms of a liquid phase transformation during annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 329
Copyright
Copyright © Materials Research Society 1987

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References

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