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Porous Silicon Organic Vapor and Humidity Sensor

Published online by Cambridge University Press:  10 February 2011

M. C. Poon ,
J.K.O. Sin ,
H. Wong ,
P. G. Han ,
W. H. Kwok  and
Y. C. Bow
M. C. Poon
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
J.K.O. Sin
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
H. Wong
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong
P. G. Han
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
W. H. Kwok
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
Y. C. Bow
Affiliation:
Department of Electrical & Electronic Engineering, Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
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Abstract

This paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800–2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43–75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 459: Symposium Y – Materials for Smart Systems II , 1996 , 183
Copyright
Copyright © Materials Research Society 1997

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References

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