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Polycrystalline Sil-x-yGex.Cy for Suppression of Boron Penetration in PMOS Structures

Published online by Cambridge University Press:  10 February 2011

C. L. Chang  and
J. C. Sturm
C. L. Chang
Affiliation:
Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ 08544. [email protected]
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ 08544.
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Abstract

We have fabricated polycrystalline Sil-x-yGexCy by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Sil-x-yGexCy suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Sil-x-yGexCy were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Sil-x-yGexCy, which deterred boron from diffusing across the underlying gate oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 213
Copyright
Copyright © Materials Research Society 1998

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References

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