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Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials

Published online by Cambridge University Press:  01 February 2011

Lina Wei-Wei Fang ,
Ji-Sheng Pan ,
Andy Eu-Jin Lim ,
Rinus Tek-Po Lee ,
Minghua Li ,
Rong Zhao ,
Luping Shi ,
Tow-Chong Chong  and
Yee-Chia Yeo
Lina Wei-Wei Fang
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, SNDL,National University of Singapore, Blk E4A #02-04 Engineering Drive 3, Singapore, 117576, Singapore
Ji-Sheng Pan
Affiliation:
[email protected], Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore, 117602, Singapore
Andy Eu-Jin Lim
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Blk E4A #02-04, Engineering Drive 3, Singapore, 117576, Singapore
Rinus Tek-Po Lee
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Blk E4A #02-04, Engineering Drive 3, Singapore, 117576, Singapore
Minghua Li
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Rong Zhao
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Luping Shi
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Tow-Chong Chong
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Yee-Chia Yeo
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Blk E4A #02-04, Engineering Drive 3, Singapore, 117576, Singapore
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Abstract

We report the energy band alignment of Ge2Sb2Te5 and a variety of common complementary-metal-oxide-semiconductor (CMOS) compatible materials. These materials include silicon, silicon oxide, hafnium oxide, silicon nitride as well as nickel silicide. High-resolution X-ray photoelectron spectroscopy was employed as the main tool to obtain the core-level spectra, the valence band spectra, and the energy loss spectra. A precise determination of the valence band offsets of Ge2Sb2Te5 and the various materials were obtained. The conduction band offsets were then determined. The energy band line-ups of Ge2Sb2Te5 and these CMOS compatible materials were established.

Keywords

amorphousx-ray photoelectron spectroscopy (XPS)electronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G02-08
Copyright
Copyright © Materials Research Society 2008

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References

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