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Performance enhancement of TiSi2 coated Si nanocrystal memory device

Published online by Cambridge University Press:  31 January 2011

Huimei Zhou  and
Jianlin Liu
Huimei Zhou
Affiliation:
[email protected], UCR, 3433 Kentucky St., Riverside, California, 92507, United States
Jianlin Liu
Affiliation:
[email protected], UCR, Electrical Engineering, Riverside, California, United States
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Abstract

Self-aligned TiSi2 coated Si nanocrystal nonvolatile memory is fabricated. This kind of MOSFET memory device is not only thermally stable, but also shows better performance in charge storage capacity, writing, erasing speed and retention characteristics. This indicates that CMOS compatible silicidation process to fabricate TiSi2 coated Si nanocrystal memory is promising in memory device applications.

Keywords

memorynanostructuresemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H01-05
Copyright
Copyright © Materials Research Society 2009

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