Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-03T08:27:51.732Z Has data issue: false hasContentIssue false
  • English
  • Français

Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

Published online by Cambridge University Press:  15 February 2011

T. Gehrke ,
K. J. Linthicum ,
D. B. Thomson ,
P. Rajagopal ,
A. D. Batchelor  and
R. F. Davis
T. Gehrke
Affiliation:
Department of Materials Science and Engineering, Analytical Instrumentation Facility, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, Analytical Instrumentation Facility, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
D. B. Thomson
Affiliation:
Department of Materials Science and Engineering, Analytical Instrumentation Facility, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
P. Rajagopal
Affiliation:
Department of Materials Science and Engineering, Analytical Instrumentation Facility, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
A. D. Batchelor
Affiliation:
Department of Materials Science and Engineering, Analytical Instrumentation Facility, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, Analytical Instrumentation Facility, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
Get access

Abstract

Pendeo-epitaxy of individual GaN and AlxGa,1-xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. These structures have been characterized using scanning electron microscopy and atomic force microscopy. The RMS roughness value of the grown side wall plane (1120) of these structures was 0.099 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.2
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Linthicum, I. K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T., Zheleva, T. S., Davis, R. F., Mat. Res. Soc. Symp., this volumeGoogle Scholar
2. Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Zheleva, T. S., Davis, R. F., Mat. Res. Soc. Symp., this volumeGoogle Scholar
3. Zheleva, T. S., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Smith, S., Davis, R. F., Mat. Res. Soc. Symp., this volumeGoogle Scholar
4. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., Davis, R. F., Appl. Phys. Lett., submitted Nov. 1998 Google Scholar
5. Zheleva, T. S., Thomson, D. B., Linthicum, K. J., Smith, S., Davis, R. F., J. of Electr. Mat., submitted Nov. 1998 Google Scholar