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Optimization of SiGe Graded Buffer Defectivity and Throughput by Means of High Growth Temperature and Pre-Threaded Substrates

Published online by Cambridge University Press:  01 February 2011

Matthew Erdtmann ,
Matthew T. Currie ,
Joseph C. Woicik  and
David Black
Matthew Erdtmann
Affiliation:
[email protected], AmberWave Systems Corporation, 13 Garabedian Dr., Salem, NH, 03079, United States, 603-870-8668, 603-870-8608
Matthew T. Currie
Affiliation:
[email protected], AmberWave Systems Corporation, United States
Joseph C. Woicik
Affiliation:
[email protected], National Institute of Standards and Technology, United States
David Black
Affiliation:
[email protected], National Institute of Standards and Technology, United States
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Abstract

Dislocation glide kinetics dictate in relaxed graded buffers a fundamental opposition between the defectivity and throughput. For state-of-the-art Si-based applications, the trade-off between defect level and wafer cost (inversely related to throughput) has made the insertion of SiGe graded buffers into production difficult. We aim to mitigate the trade-off by reporting two advances that enable simultaneous improvements in both defectivity and throughput. The first is use of a high growth temperature to allow very fast dislocation glide velocities and growth rates as high as 1.0 μm/min. The second is the use of “pre-threaded” Si substrates, substrates with an elevated density of threading dislocations. By having dislocation nucleation controlled by uniformly distributed substrate threading dislocations, instead of unpredictable heterogeneous sources, impediments to dislocation glide, such as dislocation bundles and pile-ups, are reduced. By incorporating both advances into SiGe graded buffer epitaxy, dislocation pile-up densities are reduced by nearly three orders of magnitude, threading dislocation densities are reduced by a factor of 7.4×, and wafer throughput is increased at least 33%.

Keywords

SiGedislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE12-05
Copyright
Copyright © Materials Research Society 2006

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References

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