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Optical Characterization of Focused Ion Beam Implanted AlGaAs/GaAs Multiple Quantum Well Structures

Published online by Cambridge University Press:  21 February 2011

Howard E. Jackson
Howard E. Jackson*
Affiliation:
Department of Physics University of Cincinnati Cincinnati, OH 45221-0011
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Abstract

Raman and both cw and time-resolved photoluminescence (PL) spectroscopy have been used to characterize 3.5nm/3.5nm Al0.30Ga0.70 As/GaAs multiple quantum well structures that have been patterned by focused ion beam (FIB) implantation followed by rapid thermal annealing (RTA). Raman scattering is used to characterize a FIB-delineated optical waveguide structure by identifying the appropriate RTA conditions that provide for removal of ion implantation induced damage in order to produce compostionally mixed regions that possess crystalline order. Spatially and temporally resolved PL spectra provide information on the degree of compositional mixing, exciton lifetime, and lateral transport. Anisotropic diffusion of excitons is observed in samples patterned with parallel line structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 241
Copyright
Copyright © Materials Research Society 1994

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References

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