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Optical Characteristics of Tensilely Strained GaInP/AIGaInP Mqw for Laser Diode Applications

Published online by Cambridge University Press:  10 February 2011

K. Ono ,
T. Motoda ,
M. Tsugami ,
N. Hayafuji ,
T. Sonoda  and
S. Takamiya
K. Ono
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan
T. Motoda
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan
M. Tsugami
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan
N. Hayafuji
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan
T. Sonoda
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan
S. Takamiya
Affiliation:
Optoelectronic & Microwave Devices Lab., Mitsubishi Electric Corp., 4-1, Mizuhara, Itami, Hyogo 664, Japan
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Abstract

Availability of tensilely strained GaInP/AIGaInP quantum well, which is essential to laser diodes operating at 635–650nm, is investigated by combining conventional and time-resolved photoluminescence measurements. It is found that optical characteristics are improved by introducing tensile strain into barrier layers in addition to well layers, while samples with unstrained or compressively strained barrier layers reveal inferior characteristics. Experimantal data indicate that these optical characteristics are not determined by interfacial stress, but by the energy band discontinuity between well and barrier layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 351
Copyright
Copyright © Materials Research Society 1996

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