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On the Influence of Illumination During Ion Damage Defect Anneal of Silicon

Published online by Cambridge University Press:  21 February 2011

A. Tanabe  and
S. Ashok
A. Tanabe
Affiliation:
Microelectronics Laboratory, NEC Corporation, Kanagawa, Japan
S. Ashok
Affiliation:
Department of Engineering Science, The Pennsylvania State University, University Park, PA 16802
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Abstract

An exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 709
Copyright
Copyright © Materials Research Society 1996

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