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Observation of a Hydrogen Doublet Site in High Defect Density As-Grown a-Si:H by 1H NMR

Published online by Cambridge University Press:  01 February 2011

D. Bobela ,
T. Su ,
P. C. Taylor  and
G. Ganguly
D. Bobela
Affiliation:
Department of Physics, University of Utah Salt Lake City, Utah, U.S.A.
T. Su
Affiliation:
Department of Physics, University of Utah Salt Lake City, Utah, U.S.A.
P. C. Taylor
Affiliation:
Department of Physics, University of Utah Salt Lake City, Utah, U.S.A.
G. Ganguly
Affiliation:
United Solar Ovonics Corp Troy, Michigan, U.S.A
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Abstract

1H NMR studies of hydrogenated amorphous silicon (a-Si:H) with ˜1017 cm-3 defects grown by PECVD with a rate of 5 Å/s show the existence of a hydrogen doublet for both asgrown and light-soaked samples. We observe the doublet over the temperature range from 5 to 20 K in a sample where no light soaking has occurred. The doublet line shapes display no narrowing over this temperature range. Vibrational modes characteristic of SiH2 wagging and scissor modes are seen from infrared spectroscopy. These results suggest that the doublet is due to SiH2 that occurs at a density of approximately 1 at. % in this sample. From line shape analysis, we estimate a lower limit of 1.8 ˜ for the hydrogen-to-hydrogen separation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A13.5
Copyright
Copyright © Materials Research Society 2005

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References

1 Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B 23, 23 (1985).10.1103/PhysRevB.32.23Google Scholar
2 Branz, H. M., Phys. Rev. B 59, 5498 (1999).10.1103/PhysRevB.59.5498Google Scholar
3 Su, T., Taylor, P.C., Ganguly, G., and Carlson, D.E., Phys. Rev. Lett. 89, 015502 (2002).10.1103/PhysRevLett.89.015502Google Scholar
4 Abtew, Tesfaye A., Drabold, D. A., and Taylor, P. C., Appl. Phys. Lett. (2005), in press.Google Scholar
5 Gupta, P., Colvin, V. L., and George, S. M., Phys. Rev. B 37, 8234 (1988).10.1103/PhysRevB.37.8234Google Scholar
6 Knights, J. C., and Lucovsky, G., CRC Critical Reviews in Solid State and Materials Science 21, 211.Google Scholar
7 Jeener, J. and Broekaert, P., Phys. Rev. 157, 232 (1967).10.1103/PhysRev.157.232Google Scholar
8 Reimer, J. A., Vaughn, R. W., and Knights, J.C., Phys. Rev. B 24, 3360 (1981).10.1103/PhysRevB.24.3360Google Scholar
9 Su, T., Chen, S., and Taylor, P. C., Phys. Rev. B 62, 12849 (2000).10.1103/PhysRevB.62.12849Google Scholar
10 Brodsky, M. H, Cardona, Manuel, and Cuomo, J. J., Phys. Rev. B 16, 3556 (1977).10.1103/PhysRevB.16.3556Google Scholar