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A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
In this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.
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- Research Article
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- Copyright © Materials Research Society 1994
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