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Nanofabrication of DLC-dot Arrays by Room-temperature Curing Imprint-liftoff Method

Published online by Cambridge University Press:  14 January 2013

Shuji Kiyohara ,
Shohei Matta ,
Ippei Ishikawa ,
Hideto Tanoue ,
Hirofumi Takikawa ,
Yoshio Taguchi ,
Yoshinari Sugiyama ,
Yukiko Omata  and
Yuichi Kurashima
Shuji Kiyohara
Affiliation:
Electric and Control System Engineering Course, Faculty of Advanced Engineering, Maizuru National College of Technology, 234 Aza Shiroya, Maizuru, Kyoto 625-8511, Japan
Shohei Matta
Affiliation:
Electric and Control System Engineering Course, Faculty of Advanced Engineering, Maizuru National College of Technology, 234 Aza Shiroya, Maizuru, Kyoto 625-8511, Japan
Ippei Ishikawa
Affiliation:
Electric and Control System Engineering Course, Faculty of Advanced Engineering, Maizuru National College of Technology, 234 Aza Shiroya, Maizuru, Kyoto 625-8511, Japan
Hideto Tanoue
Affiliation:
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka Tenpaku, Toyohashi, Aichi 441-8580, Japan
Hirofumi Takikawa
Affiliation:
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka Tenpaku, Toyohashi, Aichi 441-8580, Japan
Yoshio Taguchi
Affiliation:
Application and Technical Section, ELIONIX INC., 3-7-6 Motoyokoyama, Hachioji, Tokyo 192-0063, Japan
Yoshinari Sugiyama
Affiliation:
Application and Technical Section, ELIONIX INC., 3-7-6 Motoyokoyama, Hachioji, Tokyo 192-0063, Japan
Yukiko Omata
Affiliation:
Application and Technical Section, ELIONIX INC., 3-7-6 Motoyokoyama, Hachioji, Tokyo 192-0063, Japan
Yuichi Kurashima
Affiliation:
Research Center for Ubiquitous MEMS and Micro Engineering, AIST, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Abstract

As an application to the nanoemitter, we investigated the nanofabrication of diamond-like carbon (DLC)-dot arrays by room-temperature curing imprint-liftoff (RTCIL) method using aluminum mask. The DLC film which has excellent properties similar to diamond properties was used as the patterning material. A polished glass like carbon (GC) was used as a mold material. The polysiloxane in the state of sticky liquid at room temperature and stable in air exhibits a negative-exposure characteristics. Therefore, the polysiloxane was used as electron beam (EB) resist and oxide mask material in EB lithography, and also used as RTC-imprint resist material. An aluminum was used as oxide metal mask material of liftoff. We have fabricated the GC mold of dot arrays with 5 µm-square and 500 nm-height. We carried out the RTCIL process using the GC mold under the following optimum imprint conditions: 0.5 MPa-imprinting pressure and 5 min- holding time. Aluminum film on the imprinted polysiloxane was prepared by vacuum evaporation method and its thickness is 20 nm. Finally, the polysiloxane patterns were removed with acetone and aluminum mask patterns were fabricated. We found that the maximum etching selectivity of aluminum film against DLC film was as high as 35, which was obtained under an ion energy of 400 eV. Then we processed the patterned aluminum on DLC film with an ECR oxygen ion shower. We fabricated DLC-dot arrays with 5 µm-square and 400 nm-height with an aspect ratio of 0.08.

Keywords

diamondion-beam processingmicrostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1511: Symposium EE – Diamond Electronics and Biotechnology—Fundamentals to Applications VI , 2013 , mrsf12-1511-ee05-02
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Lee, S., Chung, B., Ko, T.Y., Jeon, D., Lee, K.R. and Eun, K.Y., Ultramicroscopy, 73, 17 (1998).10.1016/S0304-3991(97)00130-7CrossRefGoogle Scholar
Luo, J.K., Fu, Y.Q., Le, H.R., Williams, J.A., Spearing, S.M. and Milne, W.I., J. Micromech. Microeng. 17, S147 (2007).10.1088/0960-1317/17/7/S12CrossRefGoogle Scholar
Novikov, N.V., Gontar, A.G., Khandozhko, S.I., Kutsay, A.M., Tkach, V.N., Gorokhov, V.Yu., Belitsky, G.M. and Vasin, A.V., Diamond Relat. Mater., 9, 792 (2000).10.1016/S0925-9635(00)00242-9CrossRefGoogle Scholar
Enomoto, K., Hasebe, T., Asakawa, R., Kamijo, A., Yoshimoto, Y., Suzuki, T., Takahashi, K. and Hotta, A., Diamond Relat. Mater., 19, 806 (2010).10.1016/j.diamond.2010.01.053CrossRefGoogle Scholar
Chou, S.Y., Krauss, P.R. and Renstrom, P.J., J. Vac. Sci. Technol., B14, 4129 (1996).10.1116/1.588605CrossRefGoogle Scholar
Kiyohara, S., Araki, S., Kurashima, Y., Taguchi, Y., Sugiyama, Y. and Omata, Y., J. Mater. Sci.: Materials in Electronics, 21, 183 (2010).Google Scholar
Kiyohara, S., Kashiwagi, T., Takikawa, H., Kurashima, Y., Taguchi, Y. and Sugiyama, Y., e-J. Surf. Sci. Nanotech., 7, 772 (2009).10.1380/ejssnt.2009.772CrossRefGoogle Scholar
Kamiya, M., Tanoue, H., Takikawa, H., Taki, M., Hasegawa, Y., and Kumagai, M., Vucuum, 83, 510 (2009).10.1016/j.vacuum.2008.04.016CrossRefGoogle Scholar