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A More Efficient Approach for Monte Carlo Simulation of Deeply-Channeled Implanted Profiles in Single-Crystal Silicon

Published online by Cambridge University Press:  22 February 2011

Shyh-Horng Yang ,
David Lim ,
Steven J. Morris  and
AL F. Tasch
Shyh-Horng Yang
Affiliation:
BRC/MER 2.606E, University of Texas at Austin, Austin, TX 78712
David Lim
Affiliation:
BRC/MER 2.606E, University of Texas at Austin, Austin, TX 78712
Steven J. Morris
Affiliation:
BRC/MER 2.606E, University of Texas at Austin, Austin, TX 78712
AL F. Tasch
Affiliation:
BRC/MER 2.606E, University of Texas at Austin, Austin, TX 78712
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Abstract

In this paper is reported a new approach for the Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon which has greatly improved efficiency. This approach has been successfully implemented in the UT Monte Carlo code (UT-MARLOWE). A time savings of up to 212X has been observed with a 4-stage simulation. A simulation of arsenic implants with 15 keV implant energy typically takes about 12 minutes on a workstation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 639
Copyright
Copyright © Materials Research Society 1994

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