Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-28T11:19:43.206Z Has data issue: false hasContentIssue false
  • English
  • Français

Minority Carrier Annihilation at Crystalline Silicon Interface in Metal Oxide Semiconductor Structure

Published online by Cambridge University Press:  03 November 2014

Jun Furukawa ,
Satoshi Shigeno ,
Shinya Yoshidomi ,
Tomohito Node ,
Masahiko Hasumi ,
Toshiyuki Sameshima  and
Tomohisa Mizuno
Jun Furukawa
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Satoshi Shigeno
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Shinya Yoshidomi
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Tomohito Node
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Masahiko Hasumi
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, Tokyo, 184-8588 Japan
Tomohisa Mizuno
Affiliation:
Kanagawa University, Kanagawa, 259-1293 Japan
Get access

Abstract

We report photo induced minority carrier annihilation at the silicon surface in a metal–oxide–semiconductor (MOS) structure using 9.35 GHz microwave transmittance measurement. 7 Ωcm n-type 500-μm-thick crystalline silicon substrate coated with 100-nm-thick thermally grown SiO2 layers was used. 0.2-cm-long Al electrode bars were formed at the top and rear surfaces. 635 nm light illumination onto the top surface caused photo induced carriers to be in one side of the silicon region of the Al electrode. Microwave transmittance system detected photo induced carriers diffused from the light illuminated region via the MOS structured region. When the bias voltage was applied at +2.0 and -2.2 V to the electrode at the top surface, the surface recombination velocity increased from 44 (initial) to 83 and 86 cm/s, respectively because of depletion region formation at rear and top surface respectively. Those voltage applications caused change in the distribution of photo induced carriers in a 0.6-cm-wide region including light illuminated, MOS structured, microwave irradiated regions.

Keywords

Sisimulationdefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a13-08
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sze, S. M., Semiconductor Devices (Wiley, New York, 1985) Chap. 7.Google Scholar
Arvanitis, C. D., Bohndiek, S. E., Royle, G., Blue, A., Liang, H. X., Clark, A., Prydderch, M., Turchetta, R., and Speller, R., Med. Phys. 34, 4612 (2007).CrossRefGoogle Scholar
Green, M. A., Emery, K., Hishikawa, Y., Warta, W., and Dunlop, E. D., Prog. Photovoltaics 20, 12 (2012).CrossRefGoogle Scholar
Kousik, G. S., Ling, Z. G., and Ajmera, P. K., J. Appl. Phys. 72, 141 (1992).CrossRefGoogle Scholar
Sakamoto, K. and Sameshima, T., Jpn. J. Appl. Phys. 39, 2492 (2000).Google Scholar
Sameshima, T., Hayasaka, H., and Haba, T., Jpn. J. Appl. Phys. 48, 021204 (2009).CrossRefGoogle Scholar
Sameshima, T., Furukawa, J., Nakamura, T., Shigeno, S., Node, T., Yoshidomi, S., and Hasumi, M., Jpn. J.Appl. Phys. 53, 031301 (2014).CrossRefGoogle Scholar
Shockley, W. and Read, W. T. Jr., Phys. Rev. 87, 835 (1952).CrossRefGoogle Scholar