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The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects

Published online by Cambridge University Press:  10 February 2011

Paul R. Besser ,
John E. Sanchez Jr ,
David P. Fields ,
Shekhar Pramanick  and
Kashmir Sahota
Paul R. Besser
Affiliation:
Ad vaneed Process Development, Advanced Micro Devices, Inc., Sunnyvale, CA
John E. Sanchez Jr
Affiliation:
Materials Science Department, University of Michigan, Ann Arbor, MI
David P. Fields
Affiliation:
TexSEM Laboratories, Inc., Provo, UT
Shekhar Pramanick
Affiliation:
Technology Reliability Development, Advanced Micro Devices, Sunnyvale, CA
Kashmir Sahota
Affiliation:
Ad vaneed Process Development, Advanced Micro Devices, Inc., Sunnyvale, CA
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Abstract

Novel metal deposition stack and damascene processing methods have been used to fabricate electrically isolated parallel arrays of 1.0 μm deep aluminum-alloy interconnect trenches varying in width from 0.5 μm to 16 μm. The grain size and crystallographic texture of the Al in these trenches has been characterized using transmission electron microscopy (TEM) and local electron backscattered diffraction (EBSD), respectively. Narrow lines (0.5 and 1.0 μm wide) have a bamboo microstructure, intermediate widths (2.0 μm wide) are nearly bamboo, and wide lines (4.0 μ and wider) are polycrystalline. The <111> texture of the lines degrades with decreasing linewidth. A secondary <100> component is demonstrated and its origin proposed. The electromigration reliability of the narrow damascene Al lines was measured, and the observed enhancement of damascene Al interconnects compared to conventionally-fabricated Al interconnects is correlated with the microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 217
Copyright
Copyright © Materials Research Society 1997

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