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Mechanical Constraint and Loading on Ferroelectric Memory Capacitors

Published online by Cambridge University Press:  31 January 2011

Ivindra Pane ,
Norman Fleck ,
Daping Chu  and
John Huber
Ivindra Pane
Affiliation:
[email protected], Bandung Institute of Technology, Bandung, Indonesia
Norman Fleck
Affiliation:
[email protected], University of Cambridge, Cambridge, United Kingdom
Daping Chu
Affiliation:
[email protected], University of Cambridge, Cambridge, United Kingdom
John Huber
Affiliation:
[email protected], University of Oxford, Oxford, United Kingdom
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Abstract

The influence of mechanical constraint imposed by device geometry upon the switching response of a ferroelectric thin film memory capacitor is investigated. The memory capacitor was represented by two-dimensional ferroelectric islands of different aspect ratio, mechanically constrained by surrounding materials. Its ferroelectric non-linear behaviour was modeled by a crystal plasticity constitutive law and calculated using the finite element method. The switching response of the device, in terms of remnant charge storage, was determined as a function of geometry and constraint. The switching response under applied in-plane tensile stress and hydrostatic pressure was also studied experimentally. Our results showed that (1) the capacitor's aspect ratio could significantly affect the clamping behaviour and thus the remnant polarization, (2) it was possible to maximise the switching charge through the optimisation of the device geometry, and (3) it is possible to find a critical switching stress at zero electric field and a critical coercive field at zero residual stress.

Keywords

ferroelectricmemorythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H08-03
Copyright
Copyright © Materials Research Society 2009

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References

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