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Mathematical Model of the Bridgman-Stockbarger Method to Growth Semiconductor Single Crystals

Published online by Cambridge University Press:  26 February 2011

E. Vega ,
G. Muiñiz  and
F. Rabago
E. Vega
Affiliation:
Facultad de Ciencias
G. Muiñiz
Affiliation:
Facultad de Ciencias
F. Rabago
Affiliation:
Instituto de Física, Universidad Autónoma de San Luis Potosí, Av. A. Obregón 64, 78000 San Luis Potosí, S.L.P., México.
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Abstract

A two dimensional equation has been solved which represents the heat transfer equation for the growth of single crystals system called Bridgman- Stockbarger method. Two variations were analyzed with and without an insulation between heater and cooler. System without an insulation shows stability problems because it's directly affected by the boundary between the cooler and heater region, in this case we obtained a discontinuity in this point. System with an insulation shows higher stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 278: Symposium W – Computational Methods in Materials Science , 1992 , 281
Copyright
Copyright © Materials Research Society 1992

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References

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