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Light-Induced Metastable Changes in a-SiSx:H

Published online by Cambridge University Press:  15 February 2011

S. L. Wang  and
P. C. Taylor
S. L. Wang
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
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Abstract

Metastable light-induced increases in the dark conductivities of a-SiSx:H alloys are explained as photo-activation of hydrogen-passivated sulfur donor sites. For a sulfur concentration (sulfur-to-silicon ratio) of 5.6 × 103 the excess dark conductivity as a function of illumination temperature is thermally activated with an activation energy of 0.72 eV. When the sulfur concentration is 3.3 × 102, the temperature dependence is very weak. This dramatic difference in the temperature dependence of the creation of increased dark conductivity is explained by a lowering of the annealing temperature for the metastable changes as the sulfur concentration increases. We discuss the influence of this new metastability on the possibility of obtaining more stable films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 307
Copyright
Copyright © Materials Research Society 1995

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References

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